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ETB-58.1

DETERMINATION OF ENERGY BAND GAP IN SEMICONDUCTOR DIODE

Experimental Training Boards (ETB Series)
DETERMINATION OF ENERGY BAND  GAP IN SEMICONDUCTOR DIODE

About a Product

01 To draw the characteristics of a P-N junction Diode for reverse saturation current and temperature. 02 To determine the Energy Band Gap in a P-N Junction Diode.

Technical Specification

01 To draw the characteristics of a P-N junction Diode for reverse saturation current and temperature. 02 To determine the Energy Band Gap in a P-N Junction Diode.

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Jaipur, Rajasthan, 302006

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